3D02100 - SEMI 3D21 - Guide for Describing Glass-Based Material for Use in 3DS-IC Process StdPbc-0921 SEMI C38 — Guideline for

SEMI C38 — Guideline for Phosphorus Oxychloride

1  Epitaxial silicon wafers are utilized for many integrated circuits and discrete semiconductor devices

SEMI G5-80 (first published)

a fitting body temperature range of 23°C to 125°C (73°F to 257°F) should be maintained

This Guide is for use with 1/4-inch distribution systems at operating pressures no greater than 345 kPa (50 psi)

3D02100 - SEMI 3D21 - Guide for Describing Glass-Based Material for Use in 3DS-IC Process StdPbc-0921 SEMI C38 — Guideline for1 Purpose 1. 1 With their unique properties and features, non silicon, dielectric materials have proven to be a valuable alternative to silicon in the semiconductor and 3DS IC packaging industry. Such non silicon substrates used as carrier wafers, spacers, interposers, MEMS, RF devices, and lenses. However, until now, little information about the features and characteristics of such base materials was available to the industry. 1. 2 The non silicon